Diagnostics of Solar Cells

Fraunhofer Center for Silicon Photovoltaics CSP

© Fraunhofer CSP

Efficiency, reliability and cost reduction in production processes are the driving forces for solar cells on future photovoltaic markets. The Group »Diagnostic of Solar Cells« is working on these topics for industrial customers and partners in research and development. With a broad spectrum of material science methodology – ranging from trace elemental analytics, quantum efficiency to atom scale microstructure diagnostics – the researchers are tracking down the conversion from light to electrical energy. The same way an efficient team play of light, electrons and material structure are crucial for the photovoltaic efficiency, the diagnostic competences arise through the interaction of the Teams »Electrical Characterization«, »Trace Elemental Analytics«, »c-Si Defect Diagnostics« and »Thin Film Characterization«.

Research activities extend from the characterization of crystalline solar Silicon to microstructure related defect diagnostics for thin film photovoltaic industries. In addition, international cooperations are established to invent novel, thin film systems and laser structures for next generation solar cells.

Publications

2012

  • Bakowskie, R.; Kesser, G.; Richter, R.; Lausch, D.; Eidner, A.; Clemens, P.; Petter, K.: Fast method to determine the structural defect density of 156 x 156 mm2 Mc-Si wafers. Energy Procedia 27 (2012) 179-184; 651/2012
  • Bauer, J.; Kwapil, W.; Lausch, D.; Schubert, M.C.; Warta, W.; Bothe, K.; Breitenstein, O.: Comments on the paper »Detection and analysis of hot-spot formation in solar cells«. Solar Energy Materials and Solar Cells 99 (2012) 362-364; 107/2012
  • Bauer, J.; Lausch, D.; Blumtritt, H.; Zakharov, N.; Breitenstein, O.: Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects. Progress in Photovoltaics Research and Applications (2012) online DOI 10.1002/pip.2220; 279/2012
  • Meyer, S.; Richter, S.; Balski, M.; Hagendorf, C.: Trace element analysis in solar silicon. Photovoltaics International 2011 (2011) 34-39; 638/2012
  • Naumann, V.; Otto, M.; Wehrspohn, R. B.; Hagendorf, C.: Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition. Journal of Vacuum Science 30 (2012) 6; 229/2012
  • Turek, M.: Interplay of bulk and surface properties for steady-state measurements of minority carrier lifetimes. Journal of Applied Physics (JAP) 111 (2012) 9; 319/2012

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2011

  • Bakowskie, R.; Petter, K.; Eiternick, S.; Lausch, D.; Müller, G.: Efficient methods for detection of SiC and Si3N4 precipitates and silicon filaments in multi-crystalline wafers and solar cells. Physica Status Solidi C 8/4 (2011) 1380-1383; M248/2010
  • Breitenstein, O.; Bauer, J.; Bothe, K.; Kwapil, W.; Lausch, D.; Rau, U.; Schmidt, J.; Schneemann, M.; Schubert, M. C.; Wagner, J.-M.; Warta, W.: Understanding junction breakdown in multicrystalline solar cells. Applied Physics Reviews 1/109 (2011) 071101 1-10; M44/2011 - available online via Fraunhofer Publica
  • Lausch, D.; Werner, M.; Naumann, V.; Schneider, J.; Hagendorf, C.: Investigation of modified p-n junctions in CSG solar cells. Physica Status Solidi C 8/4 (2011) 1418-1422; M249/2010
  • Lausch, D.; Werner, M.; Naumann, V.; Schneider, J.; Hagendorf, C.: Investigation of modified p-n junctions in crystalline silicon on glass solar cells. Journal of Applied Physics 109 (2011) 084513 1-5; M53/2011
  • Richter, S.; Kaufmann, K.; Hagendorf, C.: Chemical characterization of SiC and Si3N4 precipitates in multicrystalline silicon by NIR microscopy and ToF-SIMS. Physica Status Solidi 8/3 (2011) 796-799; M243/2010
  • Siepi, E.; Lutz, S.; Meyer, S.; Panzner, S.: An ion switch regulates fusion of charged membranes. Biophysical Journal 100/10 (2011) 2412-2421; M59/2011

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